Переключение эффектов. В оксидах переходных металлов -

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Переключение эффектов. В оксидах переходных металлов -

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Характеристики

Артикул
12736853705
Состояние
Новый
Język publikacji
polski
Tytuł
Switching effects
Autor
Praca zbiorowa
Nośnik
książka papierowa
Okładka
miękka
Rok wydania
2021
Waga produktu z opakowaniem jednostkowym
0.935 kg
Wydawnictwo
Wydawnictwo Naukowe PWN
Liczba stron
500
Numer wydania
1
Szerokość produktu
16.5 cm
Wysokość produktu
23.5 cm

Описание

Switching effects. In transition metal oxides -

Switching effects. In transition metal oxides

Autor: Krzysztof S. Szot, Franciszek Krok, Krystian Roleder

EAN: 9788301213169

Typ publikacji: książka

Strony: 500

Oprawa: Miękka

SID: 2980049

Switching effects. In transition metal oxides

The oxides, especially the transition metal oxides, are a most important class of inorganic materials, being enormously interesting for basic research in solid-state physics, surface physics, defect chemistry, electrochemistry, and catalysis, to mention a few. Moreover, the practical application of these materials each year increases tremendously. This ranges from nano-electronics as the main component of resistive switching devices in neuronal networks, micro-electro-mechanical systems known as MEMS, and in ultrasonic transducers with outputs of many kilowatts, to catalysis in industrial processes. This book is a kind of breakthrough in the analysis of the variability of the physical and chemical properties of transition metal oxides. The intention of the authors is not only to link switching to the influence of different macroscopic stimuli on order parameters in ferroics such as spontaneous polarization, spontaneous strain or magnetization, but to show that switching originates at the nanoscale and can be treated as a low-size phenomenon. That is why this book presents surface sensitive methods such as LCAFM, PFM, KPFM, by means of which switching processes are investigated at the nanoscale. In particular, the transport phenomena along filaments inside oxides are described in detail and analyzed through resistive switching mechanisms from the semiconducting to the metallic state.

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