Полевой транзистор MTD20N03HDL 20А 30В

MTD20N03HDL

DPAK , 30V / 20A / 34 mOhm

HDTMOS E-FET[tm] High Density Power FET DPAK sourface mount N-Channel Enhancement-Mode Silicon Gate

This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Dokumentacja pod adresem: http://www.wolumen53.com/pdf/MTD20N03HDL.pdf